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| Composite Transistors XN6A554 Silicon NPN epitaxial planer transistor Unit: mm For high speed switching 0.650.15 6 0.95 2.8 -0.3 +0.2 +0.25 1.5 -0.05 0.650.15 1 0.3 -0.05 0.5 -0.05 2.9 -0.05 q q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. Low VCE(sat). 1.90.1 +0.2 s Features 5 2 0.95 4 3 s Basic Part Number of Element q 1.1-0.1 0.40.2 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of Emitter to base voltage element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25C) Ratings 40 40 5 100 300 300 150 -55 to +150 Unit V V V mA mA mW C C 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Collector (Tr2) 4 : Emitter (Tr2) 5 : Emitter (Tr1) 6 : Base (Tr1) EIAJ : SC-74 Mini Type Package (6-pin) Marking Symbol: DT Internal Connection 6 5 4 Tr1 1 2 3 Tr2 s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-off time Turn-on time Storage time *1 *2 (Ta=25C) Symbol ICBO IEBO hFE hFE (small/large)*1 VCE(sat) VBE(sat) fT Cob ton toff tstg *2 Conditions VCB = 40V, IE = 0 VEB = 4V, IC = 0 VCE = 1V, IC = 10mA VCE = 1V, IC = 10mA IC = 10mA, IB = 1mA IC = 10mA, IB = 1mA VCE = 10V, IE = -10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min typ 0 to 0.05 2SC3757 x 2 elements 0.1 to 0.3 0.8 max 0.1 0.1 0.16-0.06 +0.2 +0.1 1.450.1 +0.1 +0.1 Unit A A 60 0.5 0.99 0.17 320 0.25 1.0 V V MHz 450 2 17 17 10 6 pF ns Ratio between 2 elements Test Circuits 1 Composite Transistors ton, toff Test Circuit 0.1F Vout 220 Vin=10V 3.3k 3.3k Vbb= -3V 50 XN6A554 tstg Test Circuit 0.1F A 910 0.1F 500 Vin=10V 500 50 Vbb=2V VCC=10V 90 Vout PT -- Ta 500 1k Total power dissipation PT (mW) 400 50 VCC=3V 300 Vin Vout 10% 90% Vin Vout 10% 90% 0 Vin 200 10% 10% tstg (Wave form at A) Vout toff 100 ton 0 0 40 80 120 160 Ambient temperature Ta (C) IC -- VCE 120 100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 100 VBE(sat) -- IC IC/IB=10 Base to emitter saturation voltage VBE(sat) (V) 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 25C Ta=75C 30 10 3 25C 1 0.3 0.1 0.03 0.01 Ta=-25C 75C Collector current IC (mA) IB=3.0mA 2.5mA 80 2.0mA 1.5mA 60 1.0mA 40 0.5mA 20 -25C 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) hFE -- IC 600 VCE=1V 600 fT -- I E 6 Cob -- VCB Collector output capacitance Cob (pF) VCE=10V Ta=25C f=1MHz IE=0 Ta=25C Forward current transfer ratio hFE 500 Transition frequency fT (MHz) 500 5 400 400 4 300 300 3 200 Ta=75C 25C -25C 200 2 100 100 1 0 0.1 0.3 1 3 10 30 100 0 -1 0 -3 -10 -30 -100 -300 -1000 1 3 10 30 100 Collector current IC (mA) Emitter current IE (mA) Collector to base voltage VCB (V) 2 |
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